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| SUP28N15-52 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 150 FEATURES ID (A) 28 26 rDS(on) (W) 0.052 @ VGS = 10 V 0.060 @ VGS = 6 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D Primary Side Switch D TO-220AB G DRAIN connected to TAB GDS Top View S N-Channel MOSFET SUP28N15-52 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b _ Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C (mounted)a PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IS IAR EAR Symbol VDS VGS Limit 150 "20 28 16 50 28 25 31 120b 3.75a -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mounta Junction-to-Ambienta Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 71939 S-21375--Rev. A, 12-Aug-02 www.vishay.com Free Air RthJA RthJC Symbol Typical 40 62.5 1.25 Unit _C/W C/W 1 SUP28N15-52 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5 A Drain-Source On-State Resistanceb VGS = 10 V, ID = 5 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 5 A, TJ = 175_C VGS = 6 V, ID = 5 A Forward Transconductanceb gfs VDS = 15 V, ID = 25 A 0.047 40 50 0.042 0.052 0.109 0.145 0.060 S W 150 V 2 4.5 "100 1 50 250 A m mA nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 50 V, RL = 3 W ID ^ 28 A, VGEN = 10 V, RG = 2.5 W VDS = 75 V, VGS = 10 V, ID = 28 A VGS = 0 V, VDS = 25 V, F = 1 MHz 1725 216 100 33 9 12 15 70 25 60 25 100 40 40 ns 40 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 25 A, VGS = 0 V IF = 28 A, di/dt = 100 A/ms 0.9 95 50 1.5 140 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71939 S-21375--Rev. A, 12-Aug-02 SUP28N15-52 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 7 V 40 I D - Drain Current (A) I D - Drain Current (A) 6V 40 50 Vishay Siliconix Transfer Characteristics 30 30 20 20 TC = 125_C 25_C 10 5V 10 -55 _C 4V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 60 TC = -55_C 0.10 On-Resistance vs. Drain Current 50 g fs - Transconductance (S) 25_C r DS(on)- On-Resistance ( W ) 0.08 40 125_C 30 0.06 VGS = 6 V 0.04 VGS = 10 V 0.02 20 10 0 0 10 20 30 40 50 0.00 0 10 20 30 40 50 ID - Drain Current (A) ID - Drain Current (A) Capacitance 2500 20 Gate Charge 2000 C - Capacitance (pF) Ciss 1500 V GS - Gate-to-Source Voltage (V) 16 VDS = 75 V ID = 25 A 12 1000 8 500 Crss 4 Coss 0 0 30 60 90 120 150 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71939 S-21375--Rev. A, 12-Aug-02 www.vishay.com 3 SUP28N15-52 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3.0 VGS = 10 V ID = 5 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 2.5 r DS(on)- On-Resistance ( W ) (Normalized) 2.0 TJ = 150_C 10 1.5 1.0 TJ = 25_C 0.5 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 30 100 10 ms Limited by rDS(on) 100 ms Safe Operating Area 25 I D - Drain Current (A) I D - Drain Current (A) 20 10 1 ms 10 ms 1 TC = 25_C Single Pulse 100 ms dc 15 10 5 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com 4 Document Number: 71939 S-21375--Rev. A, 12-Aug-02 |
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